深圳大时代电子有限公司
DMG4N65CT
- 型号
- DMG4N65CT
- 制造商
- Diodes Incorporated
- 描述
- MOSFET N CH 650V 4A TO220-3
- 数据表
-
DMG4N65CT.pdf
- 所属分类
- 家庭
- Transistors - FETs, MOSFETs - Single
- 系列
- -
支付方式
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规格
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 2.19W (Ta) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- 发送邮件
- ldx1688@szdsddz.com or 在线查询
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